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| FDS6692 September 2003 FDS6692 30V N-Channel PowerTrench (R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features * 12 A, 30 V. RDS(ON) = 12 m @ V GS = 10 V. RDS(ON) = 14.5 m @ V GS = 4.5 V Applications * DC/DC converter * High performance trench technology for extremely low RDS(ON) * Low gate charge (18 nC typical) * High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25oC unless otherwise noted Parameter Ratings 30 16 (Note 1a) Units V V A W 12 50 2.5 1.2 1.0 -55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS6692 Device FDS6692 Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2003 Fairchild Semiconductor Corporation FDS6692 Rev D (W) FDS6692 Electrical Characteristics Symbol Parameter Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 16 V, V DS = 0 V VGS = -16 V, V DS = 0 V VDS = V GS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 12 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 12 A Min Typ Max Units 30 26 1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 1 1.6 -5 9.5 11.5 14 3 V mV/C 12 14.5 m ID(on) gFS 50 50 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2164 357 138 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 9 5 35 10 18 10 56 20 25 ns ns ns ns nC nC nC VDS = 15 V, ID = 12 A, VGS = 5 V 18 5 5 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1 (Note 2) A V 0.7 1.2 Notes: 1. RJA is the s um of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6692 Rev D (W) FDS6692 Typical Characteristics 50 6.0V ID, DRAIN CURRENT (A) 40 4.5V 3.5V 3.0V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 2.25 2 1.75 1.5 3.5V 1.25 1 0.75 0 0.5 1 1.5 2 2.5 0 10 20 30 40 50 ID, DRAIN CURRENT (A) 4.5V 6.0V 10V V GS = 3.0V 30 20 10 2.5V 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 RDS(ON) , ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 12A VGS = 10V ID = 6 A 0.025 0.02 T A = 125 C 0.015 o 0.01 TA = 25 C 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 o -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 50 VDS = 5V ID , DRAIN CURRENT (A) 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 25 C 125 C o IS, REVERSE DRAIN CURRENT (A) TA = -55 C o o VGS = 0V 10 TA = 125 C 1 0.1 0.01 0.001 0.0001 25 C -55 C o o o 30 20 10 0 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6692 Rev D (W) FDS6692 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 3000 2500 CISS 2000 1500 1000 500 CRSS 0 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) COSS f = 1MHz VGS = 0 V 4 2 0 Figure 7. Gate Charge Characteristics. 100 100s RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25 C 0.01 0.01 o Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 125C/W TA = 25C 40 1s 10s DC 30 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJA(t) = r(t) + R JA RJA = 125 C/W P(pk) 0.02 0.01 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * R JA (t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6692 Rev D (W) |
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